R6035KNZ
Nch 600V 35A Power MOSFET
Datasheet
VDSS
RDS(on)(Max.)
ID
PD
600V
0.102Ω
±35A
102W
lFeatures
1) Low on-resistance.
2) Ultra fast switching speed.
3) Parallel use is easy.
4) Pb-free lead plating ; RoHS compliant
lOutline
TO-3PF
lInner circuit
lPackaging specifications
Packing
Tube
Reel size (mm)
-
lApplication
Switching
Tape width (mm)
Type
Quantity (pcs)
-
360
Taping code
C8
Marking
R6035KNZ
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain - Source voltage
Continuous drain current (Tc = 25°C)
Pulsed drain current
VDSS
ID*1
IDP*2
600
±35
±105
V
A
A
Gate - Source voltage
static
AC(f＞1Hz)
VGSS
±20 V
±30 V
Avalanche current, single pulse
IAS 6.6 A
Avalanche energy, single pulse
EAS*3
796 mJ
Power dissipation (Tc = 25°C)
PD 102 W
Junction temperature
Tj 150 ℃
Operating junction and storage temperature range
Tstg
-55 to +150
℃
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20190603 - Rev.002
