RFN1VWM2S
RFN1VWM2S is Ultra Fast Recovery Diode manufactured by ROHM.
Features
Low forward voltage Low switching loss High current overload capacity
- Outline
- Inner Circuit
Data sheet
- Application
- Packaging Specifications
General rectification
Packing
Embossed Tape
Reel Size(mm)
- Structure
Taping Width(mm)
Quantity(pcs)
Silicon epitaxial planar
Taping Code
Marking
2F
- Absolute Maximum Ratings (Tc=25℃ unle s s oth e rw is e sp e cif ie d)
Parameter
Repetitive peak reverse voltage Reverse voltage
Symbol VRM VR
Conditions Duty≦0.5
Reverse direct voltage
Limits
Unit
Average rectified forward current
Io
60Hz half sin waveform resistive load
Tc=148℃
Peak forward surge current
Junction temperature Storage temperature
IFSM
Tj...
