Super Fast Recovery Diode
RFN2L6SDD
Datasheet
Series
Dimensions (Unit : mm)
AEC-Q101 Qualified
Land Size Figure (Unit : mm)
Standard Fast Recovery
2.0
Application
General rectification
67 96
Features
1) Low forward voltage
12
2) Low switching loss
ROHM : PMDS
JEDEC : SOD-106
1 2 : Manufacture Date
Construction
Taping Dimensions (Unit : mm)
Silicon epitaxial planar type
2.0±0.05
4.0±0.1
PMDS
Structure
Cathode
φ1.55±0.05
Anode
0.3
2.9±0.1
Absolute Maximum Ratings (Tl= 25°C)
Parameter
Symbol
4.0±0.1
φ1.55
2.8MAX
Conditions
Limits Unit
Repetitive peak reverse voltage
VRM
Duty≦0.5
600 V
Reverse voltage
VR Direct voltage
Average current
Io
On glass epoxy substrate,
60Hz half sin wave , Resistive load Tl=89ºC
Non-repetitive forward surge current IFSM 60Hz half sin wave, Non-repetitive at Tj=25ºC
600
1.5
40
V
A
A
Operating junction temperature
Tj
-
150 °C
Storage temperature
Tstg
- 55 to 150 °C
Electrical Characteristics (Tj= 25°C)
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Forward voltage
Reverse current
Reverse recovery time
VF IF=1.5A - 1.2 1.55 V
IR
VR=600V
- 0.01 1 A
trr IF=0.5A, IR=1A, Irr=0.25×IR - 16 35 ns
Thermal resistance
Rth(j-l)
Junction to Lead
- - 23 °C/W
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2015.10 - Rev.A
