FM24C04B
Features
4K bit Ferroelectric Nonvolatile RAM
- Organized as 512 x 8 bits
- High Endurance 1012 Read/Writes
- 38 Year Data Retention
- No Delay™ Writes
- Advanced High-Reliability Ferroelectric Process Fast Two-wire Serial Interface
- Up to 1 MHz maximum bus frequency
- Direct hardware replacement for EEPROM
- Supports legacy timing for 100 k Hz & 400 k Hz Low Power Operation
- 5V operation
- 100 µA Active Current (100 k Hz)
- 4 µA (typ.) Standby Current Industry Standard Configuration
- Industrial Temperature -40° C to +85° C
- 8-pin “Green”/Ro HS SOIC (-G)
Description
The FM24C04B is a 4-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 38 years while eliminating the plexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories. The FM24C04B performs write operations at bus speed....
