RM150N100HD mosfet equivalent, n-channel super trench power mosfet.
VDS =100V,ID =150A RDS(ON) <4.2mΩ @ VGS=10V Excellent gate charge x RDS(on) product Very low on-resistance RDS(on) 175 °C operating temperature Pb-free lead plating 100% .
The RM150N100HD uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.
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