RM2312 mosfet equivalent, n-channel enhancement mode power mosfet.
VDS = 20V,ID = 4.5A RDS(ON) < 45mΩ @ VGS=1.8V RDS(ON) < 40mΩ @ VGS=2.5V RDS(ON) < 33mΩ @ VGS=4.5V
High power and current handing capability Lead free product is acquired.
The RM2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application.
General Features
VDS.
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