RM30N250DF mosfet equivalent, n-channel enhancement mode power mosfet.
ƽ VDS =250V,ID=29A RDS(ON) <64mΩ @ VGS=10V
ƽ Excellent gate charge x RDS(on) product(FOM) ƽ Very low on-resistance RDS(on) ƽ Pb-free lead plating ƽ 100% UIS tested
Applic.
Schematic diagram
General Features
ƽ VDS =250V,ID=29A RDS(ON) <64mΩ @ VGS=10V
ƽ Excellent gate charge x RDS(on) produ.
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