2SC3357 Datasheet - Renesas

NPN EPITAXIAL SILICON RF TRANSISTOR

2SC3357 Features

* Low noise and high gain NF = 1.1 dB TYP., Ga = 7.5 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @ VCE = 10 V, IC = 40 mA, f = 1 GHz

* High power gain : MAG = 10 dB TYP. @ IC = 40 mA, f = 1 GHz

* Large Ptot : Ptot = 1.2 W (Mounted on 16 cm2 ×

2SC3357 General Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesa.

2SC3357 Datasheet (235.12 KB)

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2SC3357

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Renesas ↗

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235.12 KB

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Npn epitaxial silicon rf transistor.
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Cor.

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2SC3357 NPN EPITAXIAL SILICON TRANSISTOR Renesas

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2SC3357 General Description

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