2SC3357 transistor equivalent, npn epitaxial silicon rf transistor.
* Low noise and high gain NF = 1.1 dB TYP., Ga = 7.5 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @ VCE = 10 V, IC = 40 mA, f = 1 GHz.
or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics.
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