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2SC5218 - Silicon NPN Epitaxial Type Transistor

Datasheet Summary

Features

  • High gain bandwidth product fT = 9 GHz typ.
  • High gain, low noise figure PG = 13.0 dB typ, NF = 1.2 dB typ at f = 900 MHz Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector Note: Marking is “YK.
  • ”. Attention: This device is very sensitive to electro static discharge. It is recommended to adopt appropriate cautions when handling this transistor. Free Datasheet http://www. datasheet4u. com/ 2SC5218 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage.

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Datasheet Details

Part number 2SC5218
Manufacturer Renesas
File Size 191.88 KB
Description Silicon NPN Epitaxial Type Transistor
Datasheet download datasheet 2SC5218 Datasheet
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To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding.
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