2SC5750 Description
DATA SHEET NPN SILICON RF TRANSISTOR 2SC5750 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (30 mW) 4-PIN SUPER MINIMOLD.
2SC5750 Key Features
- Ideal for medium output power amplification
- PO (1 dB) = 15.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 1 dBm
- HFT3 technology (fT = 12 GHz) adopted
- High reliability through use of gold electrodes
- 4-pin super minimold package
- 8 mm wide embossed taping
- Pin 3 (Base), Pin 4 (Emitter) face the perforation side of the tape