The 2SK2857C, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 4.0 V power source.
Key Features
Directly driven by a 4.0 V power source.
Low on-state resistance RDS(on)1 = 105 m MAX. (VGS = 10 V, ID = 2.0 A) RDS(on)2 = 150 m MAX. (VGS = 4.0 V, ID = 2.0 A)
Ordering Information
Part Number
Lead Plating
Packing
Package
2SK2857C-T1-AZ/AY
-AZ : Sn-Bi , -AY : Pure Sn
1000p/Reel
SC-62 (3p PoMM)
Remark "-AZ/AY" indicates Pb-free. This product does not contain Pb in external electrode and other parts. Marking XB
Absolute Maximum Ratings (TA = 25°C)
Drain to Source Voltag.
Full PDF Text Transcription for 2SK2857C (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
2SK2857C. For precise diagrams, and layout, please refer to the original PDF.
Preliminary Data Sheet 2SK2857C N-CHANNEL MOSFET FOR SWITCHING R07DS1261EJ0200 Rev.2.00 Jun 11, 2015 Description The 2SK2857C, N-channel vertical type MOSFET designed for...
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Description The 2SK2857C, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 4.0 V power source. Features Directly driven by a 4.0 V power source. Low on-state resistance RDS(on)1 = 105 m MAX. (VGS = 10 V, ID = 2.0 A) RDS(on)2 = 150 m MAX. (VGS = 4.0 V, ID = 2.0 A) Ordering Information Part Number Lead Plating Packing Package 2SK2857C-T1-AZ/AY -AZ : Sn-Bi , -AY : Pure Sn 1000p/Reel SC-62 (3p PoMM) Remark "-AZ/AY" indicates Pb-free. This product does not contain Pb in external electrode and other parts.