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2SK2857C - N-CHANNEL MOSFET

General Description

The 2SK2857C, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 4.0 V power source.

Key Features

  • Directly driven by a 4.0 V power source.
  • Low on-state resistance RDS(on)1 = 105 m  MAX. (VGS = 10 V, ID = 2.0 A) RDS(on)2 = 150 m MAX. (VGS = 4.0 V, ID = 2.0 A) Ordering Information Part Number Lead Plating Packing Package 2SK2857C-T1-AZ/AY -AZ : Sn-Bi , -AY : Pure Sn 1000p/Reel SC-62 (3p PoMM) Remark "-AZ/AY" indicates Pb-free. This product does not contain Pb in external electrode and other parts. Marking XB Absolute Maximum Ratings (TA = 25°C) Drain to Source Voltag.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Preliminary Data Sheet 2SK2857C N-CHANNEL MOSFET FOR SWITCHING R07DS1261EJ0200 Rev.2.00 Jun 11, 2015 Description The 2SK2857C, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 4.0 V power source. Features  Directly driven by a 4.0 V power source.  Low on-state resistance RDS(on)1 = 105 m  MAX. (VGS = 10 V, ID = 2.0 A) RDS(on)2 = 150 m MAX. (VGS = 4.0 V, ID = 2.0 A) Ordering Information Part Number Lead Plating Packing Package 2SK2857C-T1-AZ/AY -AZ : Sn-Bi , -AY : Pure Sn 1000p/Reel SC-62 (3p PoMM) Remark "-AZ/AY" indicates Pb-free. This product does not contain Pb in external electrode and other parts.