2SK2857C
Description
The 2SK2857C, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 4.0 V power source.
Features
- Directly driven by a 4.0 V power source.
- Low on-state resistance RDS(on)1 = 105 m MAX. (VGS = 10 V, ID = 2.0 A) RDS(on)2 = 150 m MAX. (VGS = 4.0 V, ID = 2.0 A)
Ordering Information
Part Number
Lead Plating
Packing
Package
2SK2857C-T1-AZ/AY
-AZ : Sn-Bi , -AY : Pure Sn
1000p/Reel
SC-62 (3p Po MM)
Remark "-AZ/AY" indicates Pb-free. This product does not contain Pb in external electrode and other parts.
Marking XB
Absolute Maximum Ratings (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC)
ID(DC)
Drain Current (pulse) Note1
ID(pulse)
Total Power Dissipation Note2
Channel Temperature
Tch
Storage Temperature
Tstg
Note1 PW 10 s, Duty Cycle 1% Note2 16 cm2 X 0.7mm, ceramic substrate used
60 20 4.0 16 2.0 150
- 55 to...
