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Data Sheet
2SK3147(L), 2SK3147(S)
100V, 5A, 0.13Ωmax. Silicon N Channel Power MOS FET High Speed Power Switching
R07DS1254EJ0400 (Previous: REJ03G1072-0300)
Rev.4.00 Mar 25, 2015
Features
Low on-resistance RDS = 0.1 typ.
High speed switching 4 V gate drive device can be driven from 5 V source
Outline
RENESAS Package code: PRSS0004ZD-B (Package name: DPAK(L)-(2))
4
RENESAS Package code: PRSS0004ZD-C (Package name: DPAK(S))
4
12 3
G
D
1. Gate 2. Drain 3. Source 4. Drain
1 23
S
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1 %
2.
2SK3147 Datasheet
