Description
The F6102 is an 8-element receiver silicon IC designed using a SiGe BiCMOS process for Ka-Band SATCOM phased array applications.
Features
- 17.5GHz to 21.5GHz operation.
- 8 radiation channels.
- 6-bit phase control.
- 20ns typical gain settling time.
- 20ns typical phase settling time.
- 3° typical RMS phase error.
- 0.3dB typical RMS gain error.
- 30dB gain attenuation range.
- 5-bit IC address.
- Integrated proportional-to-absolute temperature (PTAT)
sensor with external biasing.
- -40°C to +95°C internal temperature sensor.
- Programmable 4-state on-chip memory.
- Supply voltage: +2.1V t.
F6102-Renesas.pdf
