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H5N5006FM
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance: R DS (on) = 2.5 Ω typ. • Low leakage current: IDSS = 1 µA max (at VDS = 500 V) • High speed switching: tf = 15 ns typ (at VGS = 10 V, VDD = 250 V, ID = 1.5 A) • Low gate charge: Qg = 14 nC typ (at VDD = 400 V, VGS = 10 V, ID = 3 A) • Avalanche ratings
Outline
RENESAS Package code: PRSS0003AD-A (Package name: TO-220FM)
D
123
G S
REJ03G1114-0200 (Previous: ADE-208-1112)
Rev.2.00 Sep 07, 2005
1. Gate 2. Drain 3. Source
Rev.2.
H5N5006FM Datasheet
