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H5N5006FM

Manufacturer: Renesas

H5N5006FM datasheet by Renesas.

H5N5006FM datasheet preview

H5N5006FM Datasheet Details

Part number	H5N5006FM
Datasheet	H5N5006FM-Renesas.pdf
File Size	77.05 KB
Manufacturer	Renesas
Description	Silicon N-Channel MOSFET

H5N5006FM Overview

H5N5006FM Silicon N Channel MOS FET High Speed Power Switching.

H5N5006FM Key Features

Low on-resistance: R DS (on) = 2.5 Ω typ
Low leakage current: IDSS = 1 µA max (at VDS = 500 V)
High speed switching: tf = 15 ns typ (at VGS = 10 V, VDD = 250 V, ID = 1.5 A)
Low gate charge: Qg = 14 nC typ (at VDD = 400 V, VGS = 10 V, ID = 3 A)
Avalanche ratings

H5N5006FM from other manufacturers

View H5N5006FM datasheet index

Brand Logo	Part Number	Description	Other Manufacturers
	H5N5006FM	Silicon N-Channel MOSFET	Hitachi
	H5N5006LD	(H5N5006xx) Silicon N-Channel MOSFET	Hitachi
	H5N5006LM	(H5N5006xx) Silicon N-Channel MOSFET	Hitachi
	H5N5006LS	(H5N5006xx) Silicon N-Channel MOSFET	Hitachi

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H5N5006FM Distributor