H7N0307AB Description
H7N0307AB Silicon N Channel MOS FET High Speed Power Switching.
H7N0307AB Key Features
- Low on-resistance RDS (on) = 4.6 mΩ typ
- Low drive current
- 4.5 V gate drive device can be driven from 5 V source
- Part: H7N0307AB
- Manufacturer: Renesas
- Size: 73.80 KB
Similar Part Number
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