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H7N0307LD - Silicon N-Channel MOSFET

Features

  • Low on-resistance RDS (on) = 4.6 mΩ typ.
  • Low drive current.
  • 4.5 V gate drive device can be driven from 5 V source Outline.

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Datasheet Details

Part number H7N0307LD
Manufacturer Renesas Electronics
File Size 87.60 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet H7N0307LD Datasheet
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Full PDF Text Transcription

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H7N0307LD, H7N0307LS, H7N0307LM Silicon N Channel MOS FET High Speed Power Switching REJ03G1121-0700 (Previous: ADE-208-1516E) Rev.7.00 Apr 07, 2006 Features • Low on-resistance RDS (on) = 4.6 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) ) 4 123 H7N0307LD RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) ) 4 123 1. Gate 2. Drain 3. Source 4. Drain H7N0307LS RENESAS Package code: PRSS0004AE-C (Package name: LDPAK (S)-(2) ) 4 D G 123 H7N0307LM S Rev.7.
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