Download the H7N0307LS datasheet PDF.
This datasheet also covers the H7N0307LD variant, as both devices belong to the same silicon n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.
Key Features
Low on-resistance RDS (on) = 4.6 mΩ typ.
Low drive current.
4.5 V gate drive device can be driven from 5 V source
Outline.
Full PDF Text Transcription for H7N0307LS (Reference)
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H7N0307LS. For precise diagrams, and layout, please refer to the original PDF.
H7N0307LD, H7N0307LS, H7N0307LM Silicon N Channel MOS FET High Speed Power Switching REJ03G1121-0700 (Previous: ADE-208-1516E) Rev.7.00 Apr 07, 2006 Features • Low on-res...
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(Previous: ADE-208-1516E) Rev.7.00 Apr 07, 2006 Features • Low on-resistance RDS (on) = 4.6 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) ) 4 123 H7N0307LD RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) ) 4 123 1. Gate 2. Drain 3. Source 4. Drain H7N0307LS RENESAS Package code: PRSS0004AE-C (Package name: LDPAK (S)-(2) ) 4 D G 123 H7N0307LM S Rev.7.