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H7N1005DS - Silicon N-Channel MOS FET

Download the H7N1005DS datasheet PDF. This datasheet also covers the H7N1005DL variant, as both devices belong to the same silicon n-channel mos fet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Low on-resistance RDS (on) = 85 mΩ typ.
  • Low drive current.
  • Capable of 4.5 V gate drive Outline REJ03G1736-0100 Rev.1.00 Sep 19, 2008.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (H7N1005DL-Renesas.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number H7N1005DS
Manufacturer Renesas
File Size 113.02 KB
Description Silicon N-Channel MOS FET
Datasheet download datasheet H7N1005DS Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
H7N1005LD Silicon N Channel MOS FET High Speed Power Switching Renesas Technology
H7N1005LM Silicon N Channel MOS FET High Speed Power Switching Renesas Technology
H7N1005LS Silicon N Channel MOS FET High Speed Power Switching Renesas Technology
H7N1002AB Silicon N Channel MOS FET High Speed Power Switching Renesas Technology
H7N1002LD Silicon N Channel MOS FET High Speed Power Switching Renesas Technology

Other Datasheets by Renesas

Part Number Description
H7N1005DL Silicon N-Channel MOS FET
H7N0203AB Silicon N-Channel MOSFET
H7N0307AB Silicon N-Channel MOSFET
H7N0307LD Silicon N-Channel MOSFET
H7N0307LM Silicon N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
H7N1005DL, H7N1005DS Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS (on) = 85 mΩ typ. • Low drive current • Capable of 4.5 V gate drive Outline REJ03G1736-0100 Rev.1.00 Sep 19, 2008 RENESAS Package code: PRSS0004ZD-B (Package name: DPAK (L)-(2) ) 4 123 RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S) ) D 4 123 G S 1. Gate 2. Drain 3. Source 4. Drain Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tch = 25°C, Rg ≥ 50 Ω 3.