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H7N1005DS, H7N1005DL Silicon N-Channel MOS FET

H7N1005DS Description

H7N1005DL, H7N1005DS Silicon N Channel MOS FET High Speed Power Switching .

H7N1005DS Features

* Low on-resistance RDS (on) = 85 mΩ typ.
* Low drive current
* Capable of 4.5 V gate drive Outline REJ03G1736-0100 Rev.1.00 Sep 19, 2008 RENESAS Package code: PRSS0004ZD-B (Package name: DPAK (L)-(2) ) 4 123 RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S) ) D

H7N1005DS Applications

* such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws and regulations, and procedures required by such laws and regulations. 4. All informat

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This datasheet PDF includes multiple part numbers: H7N1005DS, H7N1005DL. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
H7N1005DS, H7N1005DL
Manufacturer
Renesas ↗
File Size
113.02 KB
Datasheet
H7N1005DL-Renesas.pdf
Description
Silicon N-Channel MOS FET
Note
This datasheet PDF includes multiple part numbers: H7N1005DS, H7N1005DL.
Please refer to the document for exact specifications by model.

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Silicon N-Channel MOS FET Renesas
Renesas H7N1005DS-like datasheet