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Renesas Electronics Components Datasheet

H7N1005DS Datasheet

Silicon N-Channel MOS FET

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H7N1005DL, H7N1005DS
Silicon N Channel MOS FET
High Speed Power Switching
Features
Low on-resistance
RDS (on) = 85 mtyp.
Low drive current
Capable of 4.5 V gate drive
Outline
REJ03G1736-0100
Rev.1.00
Sep 19, 2008
RENESAS Package code: PRSS0004ZD-B
(Package name: DPAK (L)-(2) )
4
123
RENESAS Package code: PRSS0004ZD-C
(Package name: DPAK (S) )
D
4
123
G
S
1. Gate
2. Drain
3. Source
4. Drain
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1%
2. Value at Tch = 25°C, Rg 50
3. Value at Tc = 25°C
Symbol
VDSS
VGSS
ID
ID (pulse) Note 1
IDR
IAP Note 2
EAR Note 2
Pch Note 3
Tch
Tstg
Value
100
±20
12
30
12
8
6.4
20
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°C
°C
REJ03G1736-0100 Rev.1.00 Sep 19, 2008
Page 1 of 8


Renesas Electronics Components Datasheet

H7N1005DS Datasheet

Silicon N-Channel MOS FET

No Preview Available !

H7N1005DL, H7N1005DS
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min Typ Max Unit
Test Conditions
Drain to source breakdown voltage
V(BR)DSS
100
V ID = 10 mA, VGS = 0
Gate to source breakdown voltage
V(BR)GSS
±20
V IG = ±100 µA, VDS = 0
Gate to source leak current
IGSS — — ±10 µA VGS = ±16 V, VDS = 0
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
IDSS — — 10 µA VDS = 100 V, VGS = 0
VGS (off)
1.5
2.5
V ID = 1 mA, VDS = 10 V Note 4
RDS (on)
85 110 mID = 6.0 A, VGS = 10 V Note 4
— 105 155 mID = 6.0 A, VGS = 4.5 V Note 4
|yfs| 6.5 11 —
S ID = 6.0 A, VGS = 10 V Note 4
Input capacitance
Ciss
— 830 —
pF VDS = 10 V
Output capacitance
Coss
90
pF VGS = 0
Reverse transfer capacitance
Crss — 55 — pF f = 1 MHz
Total gate charge
Gate to source charge
Gate to drain charge
Qg — 15 — nC VDD = 50 V
Qgs — 3.0 — nC VGS = 10 V
Qgd — 4.0 — nC ID = 12 A
Turn-on delay time
Rise time
Turn-off delay time
td(on) — 15 — ns VGS = 10 V, ID = 6.0 A
tr — 62 — ns RL = 5
td(off) — 42 — ns Rg = 4.7
Fall time
tf — 6.5 — ns
Body to drain diode forward voltage
VDF
— 0.9 —
V IF = 12 A, VGS = 0
Body to drain diode reverse recovery
time
trr
— 40 — ns IF = 12 A, VGS = 0
diF/dt = 100 A/µs
Note: 4. Pulse test
REJ03G1736-0100 Rev.1.00 Sep 19, 2008
Page 2 of 8


Part Number H7N1005DS
Description Silicon N-Channel MOS FET
Maker Renesas
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H7N1005DS Datasheet PDF






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