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Renesas Electronics Components Datasheet

M5M29GB320VP-80 Datasheet

CMOS Block Erase Flash Memory

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Renesas LSIs
M5M29GB/T320VP-80
33,554,432-BIT (4,194,304-WORD BY 8-BIT / 2,097,152-WORD BY16-BIT)
CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
DESCRIPTION
The Mobile FLASH M5M29GB/T320VP are 3.3V-only high speed 33,554,432-bit CMOS boot block Flash Memories with alternating BGO
(Back Ground Operation) feature. The BGO feature of the device allows Program or Erase operations to be performed in one bank while
the device simultaneously allows Read operations to be performed on the other bank. This BGO feature is suitable for mobile and personal
computing, and communication products. The M5M29GB/T320VP are fabricated by CMOS technology for the peripheral circuits and
DINOR(Divided bit line NOR) architecture for the memory cells, and are available in 48pin TSOP(I) .
FEATURES
Organization
................................. 2,097,152 word x 16bit
................................. 4,194,304 word x 8 bit
Boot Block
M5M29GB320VP ........................Bottom Boot
M5M29GT320VP ........................Top Boot
Supply voltage .............................................................. VCC = 2.7 ~ 3.6V
Other Functions
Soft Ware Command Control
Selective Block Lock
Access time
.............................. 80ns (Vcc=3.0~3.6V)
90ns (Vcc=2.7~3.6V)
Status Register Read
Alternating Back Ground Program/Erase Operation
Power Dissipation
Read
................................. 72 mW (Max. at 5MHz)
(After Automatic Power saving) .......... 0.33µW (typ.)
Program/Erase ................................. 126mW (Max.)
Standby
................................. 0.33µW (typ.)
Deep power down mode ....................... 0.33µW (typ.)
Between Bank(I) ,Bank(II),Bank(III) and Bank(IV)
Package
48-Lead, 12mm x 20mm TSOP (type-I)
Auto program for Bank(I) and Bank(II)
Program Time ................................. 4ms (typ.)
Program Unit
(Byte Program) ......................... 1word/1byte
(Page Program) ......................... 128word/256byte
Auto program for Bank(III) and Bank(IV)
Program Time ................................. 4ms (typ.)
Program Unit ................................. 128word/256byte
APPLICATION
Auto Erase
Erase time
................................. 40 ms (typ.)
Code Strage
Digital Cellular Phone
Erase Unit
Telecommunication
Bank(I) Boot Block ..................... 4Kword/8Kbyte x 2
Parameter Block .............. 4Kword/8Kbyte x 6
www.DataSheet4U.comMain Block ...................... 32Kword/64Kbyte x 7
Mobile Computing Machine
PDA (Personal Digital Assistance)
Car Navigation System
Bank(II) Main Block ...................... 32Kword/64Kbyte x 8
Video Game Machine
Bank(III) Main Block ...................... 32Kword/64Kbyte x 24
Bank(IV) Main Block ...................... 32Kword/64Kbyte x 24
Program/Erase cycles ......................................... 100Kcycles
PIN CONFIGURATION (TOP VIEW)
320VP
A15
A14
A13
A12
A11
A10
A9
A8
A19
A20
WE#
RP#
NC
WP#
RY/BY#
A18
A17
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
M5M29GB/T
320VP
320VP
48 A16
47 BYTE#
46 GND
45 DQ15/A-1
44 DQ7
43 DQ14
42 DQ6
41 DQ13
40 DQ5
39 DQ12
38 DQ4
37 VCC
36 DQ11
35 DQ3
34 DQ10
33 DQ2
32 DQ9
31 DQ1
30 DQ8
29 DQ0
28 OE#
27 GND
26 CE#
25 A0
Outline 48pin TSOP type-I (12 X 20mm)
VP(Normal bend)
1
NC : NO CONNECTION
48P3E-C
Rev3.0_48a_bazz
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Renesas Electronics Components Datasheet

M5M29GB320VP-80 Datasheet

CMOS Block Erase Flash Memory

No Preview Available !

www.DataSheet4U.com
Renesas LSIs
M5M29GB/T320VP-80
33,554,432-BIT (4,194,304-WORD BY 8-BIT / 2,097,152-WORD BY16-BIT)
CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
BLOCK DIAGRAM
128 WORD PAGE BUFFER
Main Block 70
32KW
A20
A19
A18 24
A17
A16
ADDRESS
INPUTS
A15
A14
A13
X-DECODER
Main Block 47
Main Block 46
32KW
32KW
A12
A11 24
A10
A9
A8
Main Block 23
32KW
A7
Main Block 22
32KW
A6 8
A5
A4
Main Block 15
32KW
Main Block 14
32KW
A3 7
Main Block 8
32KW
A Parameter Block 7
4KW
26
Parameter Block 2
4KW
A1
2
Boot Block 1
Boot Block 0
4KW
4KW
www.DataSheet4U.comA0
Y-DECODER
Y-GATE / SENSE AMP.
CHIP ENABLE INPUT
OUTPUT ENABLE INPUT
WRITE ENABLE INPUT
WRITE PROTECT INPUT
RESET/POWER DOWN INPUT
BYTE ENABLE INPUT
CE#
OE#
WE#
WP#
RP#
BYTE#
READY/BUSY OUTPUT RY/BY#
STATUS / ID REGISTER
CUI WSM
MULTIPLEXER
INPUT/OUTPUT
BUFFERS
DQ15/A-1 DQ14DQ13DQ12
DQ3DQ2DQ1DQ0
DATA INPUTS/OUTPUTS
M5M29GB/T320VP (8/16 bit version)
VCC (3.3V)
GND (0V)
32M Flash Memory Type name
M 5 M 29G T 320 VP
Operating Voltage :
29G : 2.7 - 3.6V
Standard / BGO Type
29V : 2.3 - 2.7V
Standard / BGO Type
29W : 1.65 - 2.2V
Standard / BGO Type
Boot Block :
T : Top Boot
B : Bottom Boot
Density/Write Protect/
Word Organizetion :
320 : 32M WP1#, x8/x16
Package :
VP : 48pin TSOP(I) 12mm x 20mm (Nomal Pinout)
2 Rev3.0_48a_bazz
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Part Number M5M29GB320VP-80
Description CMOS Block Erase Flash Memory
Maker Renesas
Total Page 3 Pages
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