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N0601N - N-CHANNEL MOSFET

General Description

The N0601N is N-channel MOS Field Effect Transistor designed for high current switching applications.

Key Features

  • Low on-state resistance RDS (on) = 4.2 mΩ MAX. (VGS = 10 V, ID = 50 A).
  • Low input capacitance Ciss = 7730 pF TYP. (VDS = 25 V, VGS = 0 V).
  • High current ID(DC) = ±100 A.
  • RoHS Compliant Ordering Information Part No. N0601N-ZK-E1-AY ∗1 N0601N-ZK-E2-AY ∗1 Lead Plating Pure Sn (Tin) Packing Tape 800 p/reel Package TO-263 1.39 g TYP. Note: ∗1. Pb-free (This product does not contain Pb in the external electrode. ) Absolute Maximum Ratings (TA = 25°C, all terminals.

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Datasheet Details

Part number N0601N
Manufacturer Renesas
File Size 233.65 KB
Description N-CHANNEL MOSFET
Datasheet download datasheet N0601N Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Preliminary Data Sheet N0601N N-CHANNEL MOSFET FOR SWITCHING Description R07DS0557EJ0100 Rev.1.00 Nov 07, 2011 The N0601N is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS (on) = 4.2 mΩ MAX. (VGS = 10 V, ID = 50 A) • Low input capacitance Ciss = 7730 pF TYP. (VDS = 25 V, VGS = 0 V) • High current ID(DC) = ±100 A • RoHS Compliant Ordering Information Part No. N0601N-ZK-E1-AY ∗1 N0601N-ZK-E2-AY ∗1 Lead Plating Pure Sn (Tin) Packing Tape 800 p/reel Package TO-263 1.39 g TYP. Note: ∗1. Pb-free (This product does not contain Pb in the external electrode.