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N0604N - N-CHANNEL MOSFET

General Description

The N0604N is N-channel MOS Field Effect Transistor designed for high current switching applications.

Key Features

  • Low on-state resistance RDS (on) = 6.5 mΩ MAX. (VGS = 10 V, ID = 41 A).
  • Low input capacitance Ciss = 4150 pF TYP. (VDS = 25 V, VGS = 0 V).
  • High current ID(DC) = ±82 A.
  • RoHS Compliant Ordering Information Part No. N0604N-S19-AY ∗1 Lead Plating Pure Sn (Tin) Packing Tube 50 p/tube TO-220 1.9 g TYP. Package Note: ∗1. Pb-free (This product does not contain Pb in the external electrode. ) Absolute Maximum Ratings (TA = 25°C, all terminals are connected) Item Dra.

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Datasheet Details

Part number N0604N
Manufacturer Renesas
File Size 163.42 KB
Description N-CHANNEL MOSFET
Datasheet download datasheet N0604N Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Data Sheet N0604N N-channel MOSFET 60 V, 82 A, 6.5 mΩ Description The N0604N is N-channel MOS Field Effect Transistor designed for high current switching applications. R07DS0850EJ0100 Rev.1.00 Aug 27, 2012 Features • Low on-state resistance RDS (on) = 6.5 mΩ MAX. (VGS = 10 V, ID = 41 A) • Low input capacitance Ciss = 4150 pF TYP. (VDS = 25 V, VGS = 0 V) • High current ID(DC) = ±82 A • RoHS Compliant Ordering Information Part No. N0604N-S19-AY ∗1 Lead Plating Pure Sn (Tin) Packing Tube 50 p/tube TO-220 1.9 g TYP. Package Note: ∗1. Pb-free (This product does not contain Pb in the external electrode.