N0604N Description
The N0604N is N-channel MOS Field Effect Transistor designed for high current switching applications. R07DS0850EJ0100 Rev.1.00 Aug 27, 2012.
N0604N Key Features
- Low on-state resistance RDS (on) = 6.5 mΩ MAX. (VGS = 10 V, ID = 41 A)
- Low input capacitance Ciss = 4150 pF TYP. (VDS = 25 V, VGS = 0 V)
- High current ID(DC) = ±82 A
- RoHS pliant