Renesas Electronics N0604N
The N0604N is N-channel MOS Field Effect Transistor designed for high current switching applications.| Part No. | N0604N |
|---|---|
| Datasheet | N0604N Download |
| Manufacturer |  Renesas Electronics |
| Description | N-CHANNEL MOSFET |
| Buy | Stock & Price |
DESCRIPTION
R07DS0850EJ0100 Rev.1.00 Aug 27, 2012FEATURES
● Low on-state resistance RDS (on) = 6.5 mΩ MAX. (VGS = 10 V, ID = 41 A)● Low input capacitance Ciss = 4150 pF TYP. (VDS = 25 V, VGS = 0 V)
● High current ID(DC) = ±82 A
● RoHS Compliant Ordering Information Part No. N0604N-S19-AY ∗1 Lead Plating Pure Sn (Tin) Packing Tube 50 p/tube TO-220 1.9 g TYP. Package Note: ∗1. Pb-free (This product does not contain Pb in the external electrode.)
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C, all terminals are connected) Item Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) ∗1 Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Current ∗2 Single Avalanche Energy ∗2 Symbol VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAS EAS Ratings 60 ±20 ±82 ±200 116 1.5 150 −55 to +150 35 125 Unit V V A A W W °C °C A mJ Thermal Resistance Channel to Case (Drain) Thermal Resistance 2 Channel to Ambient Thermal Resistance ∗ Rth(ch-C) Rth(ch-A) 1.08 83.3 °C/W °C/W Notes: ∗1.
