Description
The N0601N is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
- Low on-state resistance RDS (on) = 4.2 mΩ MAX. (VGS = 10 V, ID = 50 A).
- Low input capacitance Ciss = 7730 pF TYP. (VDS = 25 V, VGS = 0 V).
- High current ID(DC) = ±100 A.
- RoHS Compliant
Ordering Information
Part No. N0601N-ZK-E1-AY ∗1 N0601N-ZK-E2-AY ∗1 Lead Plating Pure Sn (Tin) Packing Tape 800 p/reel Package TO-263 1.39 g TYP. Note: ∗1. Pb-free (This product does not contain Pb in the external electrode. )
Absolute Maximum Ratings (TA = 25°C, all terminals.
N0601N Datasheet
