N0601N Overview
R07DS0557EJ0100 Rev.1.00 Nov 07, 2011 The N0601N is N-channel MOS Field Effect Transistor designed for high current switching applications.
N0601N Key Features
- Low on-state resistance RDS (on) = 4.2 mΩ MAX. (VGS = 10 V, ID = 50 A)
- Low input capacitance Ciss = 7730 pF TYP. (VDS = 25 V, VGS = 0 V)
- High current ID(DC) = ±100 A
- RoHS pliant