N0602N - N-Channel MOSFET

Renesas

Key Features

Low on-state resistance : RDS (on) = 4.6 mΩ MAX. (VGS = 10 V, ID = 50 A).
Low Ciss : Ciss = 7730 pF TYP. (VDS = 25 V, VGS = 0 V).
High current : ID(DC) = ±100 A.
RoHS Compliant.
Quality Grade : Standard.

N0602N n-channel mosfet by Renesas - Datasheet Preview

Datasheet Details

Part number	N0602N
Manufacturer	Renesas
File Size	486.55 KB
Description	N-Channel MOSFET
Datasheet	N0602N Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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N0602N N-channel MOSFET 60 V, 100 A, 4.6 mΩ Preliminary Data Sheet R07DS0558EJ0200 Rev.2.00 2020.6.10 Features • Low on-state resistance : RDS (on) = 4.6 mΩ MAX. (VGS = 10 V, ID = 50 A) • Low Ciss : Ciss = 7730 pF TYP. (VDS = 25 V, VGS = 0 V) • High current : ID(DC) = ±100 A • RoHS Compliant • Quality Grade : Standard • Applications : For high current switching Ordering Information Part No. N0602N-S19-AY Package TO-220AB, Pb-free Note1 Packing 50 pcs / Magazine (Tube) Note: 1. Pb-free means that this product does not contain lead in the external electrode.