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NP109N04PUK Key Features

  • Super low on-state resistance RDS(on) = 1.75 mΩ MAX. (VGS = 10 V, ID = 55 A)
  • Low Ciss: Ciss = 7200 pF TYP. (VDS = 25 V)
  • Designed for automotive application and AEC-Q101 qualified

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NP109N04PUK Description

The NP109N04PUK is N-channel MOS Field Effect Transistor designed for high current switching applications.