NP15P06SLG Overview
Description
This product is P-channel MOS Field Effect Transistor designed for high current switching applications.
Key Features
- Super low on-state resistance : RDS(on) = 70 m Max. ( VGS = -10 V, ID = -7.5 A ) RDS(on) = 95 m Max. ( VGS = -4.5 V, ID = -7.5 A )
- Low input capacitance : Ciss = 1100 pF Typ
- Built-in gate protection diode
- Designed for automotive application and AEC-Q101 qualified
- Pb-free (This product does not contain Pb in the external electrode) Outline 4 Drain 1 2 3
- Drain(Fin) MP-3ZK (TO-252)
