* Super low on-state resistance : RDS(on) = 70 m Max. ( VGS = -10 V, ID = -7.5 A ) RDS(on) = 95 m Max. ( VGS = -4.5 V, ID = -7.5 A )
* Low input capacitance : Ciss = 1100 pF Typ.
* Built-in gate protection diode
* Designed for automotive application and AEC-Q101 qualified.
* Pb
NP15P06SLG Datasheet (935.72 KB)
NP15P06SLG
935.72 KB
P-channel power mosfet.
NP15P06SLG -60V -15A P-channel Power MOS FET Application : Automotive Datasheet R07DS1508EJ0100 Rev.1.00 Apr. 20, 2022 Descripti.
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