* Low on-state resistance RDS(on) = 47 m MAX. (VGS =
  –10 V, ID =
  –10 A) RDS(on) = 64 m MAX. (VGS =
  –5 V, ID =
&n.

Features
* Low on-state resistance RDS(on) = 47 m MAX. (VGS =
  –10 V, ID =
  –10 A) R.

The NP20P06YLG is P-channel MOS Field Effect Transistor designed for high current switching applications. Features
* Low on-state resistance RDS(on) = 47 m MAX. (VGS =
  –10 V, ID =
  –10 A) RDS(on) = 64 m MAX. (VGS .

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