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NP20P06YLG - N-Channel Power MOSFET

General Description

The NP20P06YLG is P-channel MOS Field Effect Transistor designed for high current switching applications.

Key Features

  • Low on-state resistance RDS(on) = 47 m MAX. (VGS =.
  • 10 V, ID =.
  • 10 A) RDS(on) = 64 m MAX. (VGS =.
  • 5 V, ID =.
  • 10 A) RDS(on) = 70 m MAX. (VGS =.
  • 4.5 V, ID =.
  • 10 A).
  • Logic level drive type.
  • Gate to Source ESD protection diode built in.
  • Designed for automotive.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Preliminary Data Sheet NP20P06YLG MOS FIELD EFFECT TRANSISTOR R07DS0706EJ0100 Rev.1.00 Apr 17, 2012 Description The NP20P06YLG is P-channel MOS Field Effect Transistor designed for high current switching applications. Features  Low on-state resistance RDS(on) = 47 m MAX. (VGS = –10 V, ID = –10 A) RDS(on) = 64 m MAX. (VGS = –5 V, ID = –10 A) RDS(on) = 70 m MAX. (VGS = –4.5 V, ID = –10 A)  Logic level drive type  Gate to Source ESD protection diode built in  Designed for automotive application and AEC-Q101 qualified Ordering Information Part No.