NP20P06YLG Datasheet | Renesas

Description The NP20P06YLG is P-channel MOS Field Effect Transistor designed for high current switching applications. Features - Low on-state resistance RDS(on) = 47 m MAX. (VGS = - 10 V, ID = - 10 A) RDS(on) = 64 m MAX. (VGS = - 5 V, ID = - 10 A) RDS(on) = 70 m MAX. (VGS = - 4.5 V, ID = - 10 A) - Logic level drive type - Gate to Source ESD protection diode built in - Designed for automotive application and AEC-Q101 qualified Ordering Information Part No. NP20P06YLG-E1-AY - 1 NP20P06YLG-E2-AY - 1 Lead Plating Pure Sn (Tin) Packing Tape 2500 p/reel Taping (E1 type) Taping (E2 type) Note: - 1 Pb-free (This product does not contain Pb in the external electrode) Package 8-pin HSON Absolute Maximum Ratings (TA = 25°C) Item Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) - 1 Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) - 2 Channel Temperature Storage Temperature Single Avalanche Current - 3 Single Avalanche Energy - 3 Symbol VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAS EAS Ratings - 60 20 20 60 57 1.0 175 - 55 to +175 17 29 Unit V V A A W W °C °C A m J Thermal Resistance Channel to Case Thermal Resistance Rth(ch-C)...