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Renesas Electronics Components Datasheet

NP20P06YLG Datasheet

MOSFET

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Preliminary Data Sheet
NP20P06YLG
MOS FIELD EFFECT TRANSISTOR
R07DS0706EJ0100
Rev.1.00
Apr 17, 2012
Description
The NP20P06YLG is P-channel MOS Field Effect Transistor designed for high current switching applications.
Features
Low on-state resistance
RDS(on) = 47 mMAX. (VGS = –10 V, ID = –10 A)
RDS(on) = 64 mMAX. (VGS = –5 V, ID = –10 A)
RDS(on) = 70 mMAX. (VGS = –4.5 V, ID = –10 A)
Logic level drive type
Gate to Source ESD protection diode built in
Designed for automotive application and AEC-Q101 qualified
Ordering Information
Part No.
NP20P06YLG-E1-AY *1
NP20P06YLG-E2-AY *1
Lead Plating
Pure Sn (Tin)
Packing
Tape 2500 p/reel Taping (E1 type)
Taping (E2 type)
Note: *1 Pb-free (This product does not contain Pb in the external electrode)
Package
8-pin HSON
Absolute Maximum Ratings (TA = 25°C)
Item
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) *1
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C) *2
Channel Temperature
Storage Temperature
Single Avalanche Current *3
Single Avalanche Energy *3
Symbol
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
Tch
Tstg
IAS
EAS
Ratings
–60
20
20
60
57
1.0
175
–55 to +175
17
29
Unit
V
V
A
A
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Case Thermal Resistance
Rth(ch-C)
Channel to Ambient Thermal Resistance *2 Rth(ch-A)
2.63
°C/W
150
°C/W
Notes: *1 TC = 25°C, PW 10 s, Duty Cycle 1%
*2 Mounted on glass epoxy substrate of 40 mm 40 mm 1.6 mmt with 4% copper area (35 m)
*3 Tch(start) = 25°C, VDD = –30 V, RG = 25 , L = 100 H, VGS = –20 V 0 V
R07DS0706EJ0100 Rev.1.00
Apr 17, 2012
Page 1 of 6


Renesas Electronics Components Datasheet

NP20P06YLG Datasheet

MOSFET

No Preview Available !

NP20P06YLG
Electrical Characteristics (TA = 25°C)
Item
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate to Source Threshold Voltage
Forward Transfer Admittance *1
Drain to Source On-state Resistance *1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage *1
Reverse Recovery Time
Reverse Recovery Charge
Note: *1 Pulsed test
Symbol
IDSS
IGSS
VGS(th)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VF(S-D)
trr
Qrr
MIN.
–1.0
9
TYP.
–1.7
20
37
41
43
1605
150
96
8
8
160
80
34
4
9
0.95
38
50
MAX.
–1
10
–2.5
47
64
70
2407
225
173
16
20
320
200
51
1.5
Unit
A
A
V
S
m
m
m
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
Test Conditions
VDS = –60 V, VGS = 0 V
VGS = 20 V, VDS = 0 V
VDS = VGS, ID = –250 A
VDS = –5 V, ID = –10 A
VGS = –10 V, ID = –10 A
VGS = –5 V, ID = –10 A
VGS = –4.5 V, ID = –10 A
VDS = –25 V
VGS = 0 V
f = 1 MHz
VDD = –30 V, ID = –10 A
VGS = –10 V
RG = 0
VDD = –48 V
VGS = –10 V
ID = –20 A
IF = 20 A, VGS = 0 V
IF = 20 A, VGS = 0 V
di/dt = 100 A/s
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25 Ω
L
PG.
VGS = –20 0 V
50 Ω
VDD
IAS BVDSS
ID
VDD
VDS
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
IG = –2 mA
RL
PG.
50 Ω
VDD
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
PG.
RG
VGS(–)
0
τ
τ = 1 μs
Duty Cycle 1%
RL
VGS(–)
VGS
Wave Form
10%
0
VDD
VDS(–)
90%
VDS
VDS
0
Wave Form
td(on)
90%
VGS
90%
10% 10%
tr td(off)
tf
ton
toff
R07DS0706EJ0100 Rev.1.00
Apr 17, 2012
Page 2 of 6



Part Number NP20P06YLG
Description MOSFET
Maker Renesas
Total Page 3 Pages
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