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NP20P04SLG
-40V – -20A – P-channel Power MOS FET Application : Automotive
Datasheet
R07DS1517EJ0100 Rev.1.00
Jun. 10, 2022
Description
This product is P-channel MOS Field Effect Transistor designed for high current switching applications.
Features
Super low on-state resistance : RDS(on) = 25 m Max. ( VGS = -10 V, ID = -10 A ) RDS(on) = 38 m Max. ( VGS = -4.5 V, ID = -10 A )
Low input capacitance : Ciss = 1650 pF Typ. Built-in gate protection diode Designed for automotive application and AEC-Q101 qualified. Pb-free (This product does not contain Pb in the external electrode)
Outline
4
Drain
1 2 3 1. Gate 2. Drain 3. Source 4.