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Preliminary Data Sheet
NP20P06YLG
MOS FIELD EFFECT TRANSISTOR
R07DS0706EJ0100 Rev.1.00
Apr 17, 2012
Description
The NP20P06YLG is P-channel MOS Field Effect Transistor designed for high current switching applications.
Features
Low on-state resistance RDS(on) = 47 m MAX. (VGS = –10 V, ID = –10 A) RDS(on) = 64 m MAX. (VGS = –5 V, ID = –10 A) RDS(on) = 70 m MAX. (VGS = –4.5 V, ID = –10 A)
Logic level drive type Gate to Source ESD protection diode built in Designed for automotive application and AEC-Q101 qualified
Ordering Information
Part No.
NP20P06YLG Datasheet
