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Preliminary Data Sheet
NP20N10YDF
MOS FIELD EFFECT TRANSISTOR
R07DS0705EJ0100 Rev.1.00
Apr 17, 2012
Description
The NP20N10YDF is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
Low on-state resistance RDS(on) = 55 m MAX. (VGS = 10 V, ID = 10 A) RDS(on) = 68 m MAX. (VGS = 5 V, ID = 10 A) RDS(on) = 74 m MAX. (VGS = 4.5 V, ID = 10 A)
Low Ciss: Ciss = 1000 pF TYP. (VDS = 25 V, VGS = 0 V) Logic level drive type Designed for automotive application and AEC-Q101 qualified
Ordering Information
Part No.