NP22N055HHE
NP22N055HHE is N-Channel Power MOSFET manufactured by Renesas.
DESCRIPTION
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
FEATURES
- Channel temperature 175 degree rated
- Super low on-state resistance
RDS(on)1 = 39 mΩ MAX. (VGS = 10 V, ID = 11 A)
- Low Ciss : Ciss = 590 p F TYP.
- Built-in gate protection diode
ORDERING INFORMATION
PART NUMBER
PACKAGE
NP22N055HHE NP22N055IHE Note
TO-251 (JEITA) / MP-3 TO-252 (JEITA) / MP-3Z
NP22N055SHE
TO-252 (JEDEC) / MP-3ZK
Note Not for new design.
(TO-251)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
VDSS
Gate to Source Voltage
VGSS
±20
Drain Current (DC) Drain Current (Pulse) Note1
ID(DC) ID(pulse)
±22 ±55
Total Power Dissipation (TA = 25°C)
Total Power Dissipation (TC = 25°C) Single Avalanche Current Note2 Single Avalanche Energy Note2
PT IAS EAS
45 13 / 5 16 / 25
Channel Temperature
Tch 175
Storage Temperature
Tstg
- 55 to +175
V V A A W W A m J °C °C
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, RG = 25 Ω , VGS = 20 → 0 V (See Figure...
