Preliminary Data Sheet
NP45N06VUK, NP45N06PUK
60 V – 45 A – N-channel Power MOS FET
Application: Automotive
R07DS0953EJ0100
Rev.1.00
Nov 20, 2012
Description
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
Features
Super low on-state resistance
RDS(on) = 9.6 m MAX. (VGS = 10 V, ID = 23 A)
Low Ciss: Ciss = 1690 pF TYP. (VDS = 25 V)
Designed for automotive application and AEC-Q101 qualified
Ordering Information
Part No.
NP45N06VUK-E1-AY *1
NP45N06VUK-E2-AY *1
NP45N06PUK-E1-AY *1
NP45N06PUK-E2-AY *1
Lead Plating
Pure Sn (Tin)
Packing
Tape 2500 p/reel
Taping (E1 type)
Taping (E2 type)
Tape 800 p/reel
Taping (E1 type)
Taping (E2 type)
Note: *1 Pb-free (This product does not contain Pb in the external electrode)
Package
TO-252 (MP-3ZP)
TO-263 (MP-25ZP)
Absolute Maximum Ratings (TA = 25°C)
Item
Symbol
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) *1
ID(DC)
ID(pulse)
Total Power Dissipation (TC = 25°C)
PT1
Total Power Dissipation
(TA = 25°C)
NP45N06VUK
NP45N06PUK
PT2
Channel Temperature
Tch
Storage Temperature
Repetitive Avalanche Current *2
Repetitive Avalanche Energy *2
Tstg
IAR
EAR
Notes: *1 TC = 25°C, PW 10 s, Duty Cycle 1%
*2 RG = 25 , VGS = 20 V 0 V
Ratings
60
20
45
135
75
1.2
1.8
175
–55 to +175
19
36
Unit
V
V
A
A
W
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
NP45N06VUK
NP45N06PUK
2.00 °C/W
125 °C/W
83.3 °C/W
R07DS0953EJ0100 Rev.1.00
Nov 20, 2012
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