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NP45N06VUK - N-Channel MOSFET

Description

These products are N-channel MOS Field Effect Transistors designed for high current switching applications.

Features

  • Super low on-state resistance RDS(on) = 9.6 m MAX. (VGS = 10 V, ID = 23 A).
  • Low Ciss: Ciss = 1690 pF TYP. (VDS = 25 V).
  • Designed for automotive.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Preliminary Data Sheet NP45N06VUK, NP45N06PUK 60 V – 45 A – N-channel Power MOS FET Application: Automotive R07DS0953EJ0200 Rev.2.00 May 24, 2018 Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features  Super low on-state resistance RDS(on) = 9.6 m MAX. (VGS = 10 V, ID = 23 A)  Low Ciss: Ciss = 1690 pF TYP. (VDS = 25 V)  Designed for automotive application and AEC-Q101 qualified Ordering Information Part No.
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