Datasheet Details
| Part number | R1Q6A7218ABG |
|---|---|
| Manufacturer | Renesas |
| File Size | 796.15 KB |
| Description | 72-Mbit DDRII SRAM Separate I/O 2-word Burst RAM |
| Datasheet |
 R1Q6A7218ABG Datasheet
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General Description
The R1Q6A7236 is a 2,097,152-word by 36-bit and the R1Q6A7218 is a 4,194,304-word by 18-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.
It integrates unique synchronous peripheral circuitry and a burst counter.
Key Features
- ႑ Power Supply.
- 1.8 V for core (VDD), 1.4 V to VDD for I/O (VDDQ) ႑ Clock.
- Fast clock cycle time for high bandwidth.
- Two input clocks (K and /K) for precise DDR timing at clock rising edges only.
- Two input clocks for output data (C and /C) to minimize clock skew and flight time mismatches.
- Two output echo clocks (CQ and /CQ) simplify data capture in high-speed systems.
- Clock-stop capability with μs restart ႑ I/O.
- Separate independent.