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R1RW0404D - 4M High Speed SRAM

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Renesas

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R1RW0404D 4M High Speed SRAM by Renesas - Datasheet Preview — Datasheet preview – R1RW0404D

Datasheet Details

Part number	R1RW0404D
Manufacturer	Renesas
File Size	167.89 KB
Description	4M High Speed SRAM
Datasheet	R1RW0404D Datasheet
Additional preview pages of the R1RW0404D datasheet.

Product details

Description

The R1RW0404D is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit.

Features

Single supply: 3.3 V ± 0.3 V.
Access time: 12 ns (max).
Completely static memory  No clock or timing strobe required.
Equal access and cycle times.
Directly TTL compatible  All inputs and outputs.
Operating current: 100 mA (max).
TTL standby current: 40 mA (max).
CMOS standby current : 5 mA (max) : 0.8 mA (max) (L-version).
Data retention current: 0.4 mA (max) (L-version).
Data retention voltage: 2 V (mi.

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Published: Oct 10, 2014 |