R1RW0404D Overview
The R1RW0404D is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology. It is most appropriate for the application which requires high speed and high density memory, such as cache and buffer memory in system.
R1RW0404D Key Features
- Single supply: 3.3 V ± 0.3 V
- Access time: 12 ns (max)
- pletely static memory No clock or timing strobe required
- Equal access and cycle times
- Directly TTL patible All inputs and outputs
- Operating current: 100 mA (max)
- TTL standby current: 40 mA (max)
- CMOS standby current : 5 mA (max) : 0.8 mA (max) (L-version)
- Data retention current: 0.4 mA (max) (L-version)
- Data retention voltage: 2 V (min) (L-version)