R1RW0416DSB-0PR
Description
The R1RW0416D is a 4-Mbit high speed static RAM organized 256-kword × 16-bit.
Key Features
- Access time: 10ns / 12ns (max)
- pletely static memory
- Equal access and cycle times
- Operating current: 145mA / 130mA (max)
- TTL standby current: 40mA (max)
- CMOS standby current : 5mA (max)
- Data retention current : 0.4mA (max) (L-version) : 0.2mA (max) (S-version)
- Data retention voltage: 2.0V (min) (L-version , S-version)
- Center VCC and VSS type pin out
