R1RW0416DSB-0PR Datasheet | Renesas

R1RW0416D Series 4M High Speed SRAM (256-kword × 16-bit) R10DS0282EJ0100 Rev.1.00 Nov.18.19 Description The R1RW0416D is a 4-Mbit high speed static RAM organized 256-kword × 16-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology. It is most appropriate for the application which requires high speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. Especially, L-Version and SVersion are low power consumption and it is the best for the battery backup system. The package prepares 400-mil 44-pin SOJ and 400-mil 44-pin plastic TSOPII for high density surface mounting. Features - Single 3.3V supply: 3.3V ± 0.3V - Access time: 10ns / 12ns (max) - pletely static memory ⎯ No clock or timing strobe required - Equal access and cycle times - Directly TTL patible ⎯ All inputs and outputs - Operating current: 145m A / 130m A (max) - TTL standby current: 40m A (max) - CMOS standby current : 5m A (max) : 0.8m A (max) (L-version) : 0.5m A (max) (S-version) - Data retention current : 0.4m A (max) (L-version) : 0.2m A (max) (S-version) - Data retention voltage: 2.0V (min) (L-version , S-version) - Center VCC and VSS type pin out Ordering Information Type No. R1RW0416DGE-2PR R1RW0416DGE-2LR R1RW0416DSB-0PR R1RW0416DSB-2PR R1RW0416DSB-2LR R1RW0416DSB-2SR Access time 12ns 12ns 10ns 12ns 12ns 12ns Version Normal L-Version Normal Normal L-Version S-Version Package 400-mil 44-pin plastic SOJ 400-mil 44-pin plastic TSOPII R10DS0282EJ0100 Rev.1.00 Nov.18.19 Page 1 of 13 R1RW0416D...