R1RW0416DSB-0PR
Overview
The R1RW0416D is a 4-Mbit high speed static RAM organized 256-kword × 16-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology.
- Single 3.3V supply: 3.3V ± 0.3V
- Access time: 10ns / 12ns (max)
- Completely static memory ⎯ No clock or timing strobe required
- Equal access and cycle times
- Directly TTL compatible ⎯ All inputs and outputs
- Operating current: 145mA / 130mA (max)
- TTL standby current: 40mA (max)
- CMOS standby current : 5mA (max) : 0.8mA (max) (L-version) : 0.5mA (max) (S-version)
- Data retention current : 0.4mA (max) (L-version) : 0.2mA (max) (S-version)
- Data retention voltage: 2.0V (min) (L-version , S-version)
