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R1RW0416DSB-2SR, R1RW0416D - 4M High Speed SRAM

Renesas

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R1RW0416DSB-2SR Datasheet Preview — This datasheet PDF includes multiple part numbers: R1RW0416DSB-2SR, R1RW0416D. Please refer to the document for exact specifications by model.

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Datasheet Details

Part number	R1RW0416DSB-2SR, R1RW0416D
Manufacturer	Renesas ↗
File Size	567.58 KB
Description	4M High Speed SRAM
Datasheet	R1RW0416D-Renesas.pdf
Note	This datasheet PDF includes multiple part numbers: R1RW0416DSB-2SR, R1RW0416D. Please refer to the document for exact specifications by model.

R1RW0416DSB-2SR Product details

Description

The R1RW0416D is a 4-Mbit high speed static RAM organized 256-kword × 16-bit.

Features

Single 3.3V supply: 3.3V ± 0.3V.
Access time: 10ns / 12ns (max).
Completely static memory ⎯ No clock or timing strobe required.
Equal access and cycle times.
Directly TTL compatible ⎯ All inputs and outputs.
Operating current: 145mA / 130mA (max).
TTL standby current: 40mA (max).
CMOS standby current : 5mA (max) : 0.8mA (max) (L-version) : 0.5mA (max) (S-version).
Data retention current : 0.4mA (max) (L-version) :.

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Published: Aug 6, 2020 |