R1RW0416DSB-2SR Datasheet - Renesas

4M High Speed SRAM

R1RW0416DSB-2SR Features

* Single 3.3V supply: 3.3V ± 0.3V

* Access time: 10ns / 12ns (max)

* Completely static memory ⎯ No clock or timing strobe required

* Equal access and cycle times

* Directly TTL compatible ⎯ All inputs and outputs

* Operating current: 145mA / 130mA (max

R1RW0416DSB-2SR General Description

The R1RW0416D is a 4-Mbit high speed static RAM organized 256-kword × 16-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology. It is most appropriate for the application which requires high speed, high density me.

R1RW0416DSB-2SR Datasheet (567.58 KB)