* Super low on-state resistance RDS(on) = 2.4 m MAX. ( VGS = 10 V, ID = 125A )
* Low input capacitance Ciss = 9500pF TYP. ( VDS = 50 V )
* Designed for automotive application and AEC-Q101 qualified
* Pb-free (This product does not contain Pb in the external electrode
RBA250N10CHPF-4UA02 Datasheet (660.23 KB)
RBA250N10CHPF-4UA02
660.23 KB
N-channel power mosfet.
RBA250N10CHPF-4UA02 RBA250N10CHPF-4UA02 100V 250A N-channel Power MOS FET Application : Automotive Data Sheet R07DS1488EJ0100 Re.
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