RBA250N10CHPF-4UA02 Datasheet, MOSFET, Renesas

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RBA250N10CHPF-4UA02 Features and benefits

* Super low on-state resistance RDS(on) = 2.4 m MAX. ( VGS = 10 V, ID = 125A )
* Low input capacitance Ciss = 9500pF TYP. ( VDS = 50 V )
* Designed for autom.

RBA250N10CHPF-4UA02 Application

Features
* Super low on-state resistance RDS(on) = 2.4 m MAX. ( VGS = 10 V, ID = 125A )
* Low input capacitanc.

RBA250N10CHPF-4UA02 Description

The RBA250N10CHPF-4UA02 is N-channel MOS Field Effect Transistor designed for high current switching applications. Features
* Super low on-state resistance RDS(on) = 2.4 m MAX. ( VGS = 10 V, ID = 125A )
* Low input capacitance Ciss = 9500pF .

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