RBN75H125S1FP4-A0
RBN75H125S1FP4-A0 is IGBT manufactured by Renesas.
Features
- Trench gate and thin wafer technology (G8H series)
- High speed switching
- Built in fast recovery diode in one package
- Short circuit withstands time (10 µs min.)
- Low collector to emitter saturation voltage
- Applications: UPS, Welding, photovoltaic
VCE(sat) = 1.8 V typ. (at IC = 75 A, VGE = 15 V, Ta = 25°C) inverters, Power converter system
- Quality grade: Standard
Key Performance
Type RBN75H125S1FP4-A0
VCES 1250 V
IC 75 A
VCE(sat), TC = 25°C 1.8 V
IF 50 A t SC 10 µs
Tj 175 °C
Outline
RENESAS Package code: PRSS0003ZQ-A (Package name: TO-247plus)
4 123
1. Gate
2. Collector 3. Emitter
4. Collector
R07DS1382EJ0141 Rev.1.41 Oct.14.2021
Page 1 of 11
Absolute Maximum Ratings
(Tc = 25°C)
Item
Symbol
Ratings
Unit
Collector to emitter voltage
VCES
Gate to emitter voltage
VGES
±30...
