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RJF0605DPD Datasheet N-Channel MOSFET

Manufacturer: Renesas

Overview: Target Specifications Datasheet RJF0605DPD Silicon N Channel MOS FET Series Power Switching R07DS0714EJ0100 Rev.1.

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General Description

This FET has the over temperature shut-down capability sensing to the junction temperature.

This FET has the built-in over temperature shut-down circuit in the gate area.

And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc..

Key Features

  • Logic level operation (4 V Gate drive).
  • Built-in the over temperature shut-down circuit.
  • High endurance capability against to the short circuit.
  • Latch type shut down operation (need 0 voltage recovery).
  • Built-in the current limitation circuit.
  • Power supply voltage applies 12 V and 24 V.
  • For Industrial.

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