RJF0606JPE Datasheet (Renesas) - Silicon N-Channel FET

RJF0606JPE - Silicon N-Channel FET

This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumptio

RJF0606JPE Features

* Logic level operation (4 V Gate drive).

* Built-in the over temperature shut-down circuit.

* High endurance capability against to the short circuit.

* Latch type shut down operation (need 0 voltage recovery).

* Built-in the current limitation circuit.

RJF0606JPE Datasheet - Renesas

RJF0606JPE - Silicon N-Channel FET

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