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Preliminary Datasheet
RJH1CD7DPQ-A0
1200 V - 25 A - IGBT Application: Inverter
Features
Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.2 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C) Built in fast recovery diode (trr = 100 ns typ.) in one package Trench gate and thin wafer technology High speed switching tf = 100 ns typ. (at VCC = 600 V, VGE = 15 V, IC = 25 A, Rg = 5 , Ta = 25°C, inductive load) R07DS0453EJ0100 Rev.1.00 Jul 22, 2011
Outline
RENESAS Package code: PRSS0003ZH-A (Package name: TO-247A)
C
4 G
1. Gate 2. Collector 3. Emitter 4. Collector
E
1 2
3
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