RJH60D7DPQ-E0 Description
Preliminary Datasheet RJH60D7DPQ-E0 600V - 50A - IGBT Application:.
RJH60D7DPQ-E0 Key Features
- Short circuit withstand time (5 s typ.)
- Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)
- Built in fast recovery diode (100 ns typ.) in one package
- Trench gate and thin wafer technology