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RJH60F3DPK - High Speed Power Switching

Description

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Features

  • Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (IC = 20 A, VGE = 15 V, Ta = 25°C).
  • Built in fast recovery diode in one package.
  • Trench gate and thin wafer technology.
  • High speed switching tf = 92 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta = 25°C, inductive load) R07DS0199EJ0200 Rev.2.00 Dec 01, 2010 Outline.

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Datasheet Details

Part number RJH60F3DPK
Manufacturer Renesas
File Size 149.60 KB
Description High Speed Power Switching
Datasheet download datasheet RJH60F3DPK Datasheet

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Full PDF Text Transcription

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Preliminary Datasheet RJH60F3DPK Silicon N Channel IGBT High Speed Power Switching Features  Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (IC = 20 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package  Trench gate and thin wafer technology  High speed switching tf = 92 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta = 25°C, inductive load) R07DS0199EJ0200 Rev.2.00 Dec 01, 2010 Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) C 4 G 1. Gate 2. Collector 3. Emitter 4. Collector (Flange) E www.DataSheet.
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