RJH60F3DPK Description
Preliminary Datasheet RJH60F3DPK Silicon N Channel IGBT High Speed Power Switching.
RJH60F3DPK Key Features
- Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (IC = 20 A, VGE = 15 V, Ta = 25°C)
- Built in fast recovery diode in one package
- Trench gate and thin wafer technology