RJH60F7BDPQ-A0 Description
Preliminary Datasheet RJH60F7BDPQ-A0 600V - 50A - IGBT High Speed Power Switching R07DS0677EJ0200 Rev.2.00 Nov 21,.
RJH60F7BDPQ-A0 Key Features
- Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Tj = 25°C)
- Built in fast recovery diode in one package
- Trench gate and thin wafer technology
- High speed switching