Datasheet4U Logo Datasheet4U.com

RJH60F7DPQ-A0 - High Speed Power Switching

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment.

Features

  • 1B R07DS0328EJ0200 Rev.2.00 Jul 22, 2011.
  • Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C).
  • Built in fast recovery diode in one package.
  • Trench gate and thin wafer technology.
  • High speed switching tf = 74 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta = 25°C, inductive load) Outline 2B.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
RJH60F7ADPK Silicon N Channel IGBT Renesas Technology
RJH60F0DPK Silicon N Channel IGBT Renesas Technology
RJH60F4DPK Silicon N Channel IGBT Renesas Technology
RJH60F5DPK Silicon N-Channel IGBT Renesas Technology
RJH60F6DPK Silicon N-Channel IGBT Renesas Technology

Other Datasheets by Renesas

Part Number Description
RJH60F7BDPQ-A0 IGBT
RJH60F0DPQ-A0 High Speed Power Switching
RJH60F3DPK High Speed Power Switching
RJH60F3DPQ-A0 High Speed Power Switching
RJH60F4DPQ-A0 High Speed Power Switching

Full PDF Text Transcription

Click to expand full text
Preliminary Datasheet RJH60F7DPQ-A0 0B 600 V - 50 A - IGBT High Speed Power Switching Features 1B R07DS0328EJ0200 Rev.2.00 Jul 22, 2011  Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package  Trench gate and thin wafer technology  High speed switching tf = 74 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta = 25°C, inductive load) Outline 2B RENESAS Package code: PRSS0003ZH-A (Package name: TO-247A) C 4 G 1. Gate 2. Collector 3. Emitter 4. Collector E 1 2 3 www.DataSheet.
Published: |