RJH60F7DPQ-A0 Description
Preliminary Datasheet RJH60F7DPQ-A0 0B 600 V - 50 A - IGBT High Speed Power Switching.
RJH60F7DPQ-A0 Key Features
- Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)
- Built in fast recovery diode in one package
- Trench gate and thin wafer technology
- High speed switching tf = 74 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta = 25°C, inductive load)