RJH60M1DPE Description
Preliminary Datasheet RJH60M1DPE 600 V - 8 A - IGBT Application:.
RJH60M1DPE Key Features
- Short circuit withstand time (8 s typ.)
- Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 8 A, VGE = 15 V, Ta = 25°C)
- Built in fast recovery diode (100 ns typ.) in one package
- Trench gate and thin wafer technology