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RJH60M1DPP-M0 Datasheet, Renesas

RJH60M1DPP-M0 igbt equivalent, igbt.

RJH60M1DPP-M0 Avg. rating / M : 1.0 rating-11

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RJH60M1DPP-M0 Datasheet

Features and benefits


* Short circuit withstand time (8 s typ.)
* Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 8 A, VGE = 15 V, Ta = 25°C)
* Built in.

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and i.

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TAGS

RJH60M1DPP-M0
IGBT
RJH60M1DPE
RJH60M0DPQ-A0
RJH60M2DPE
Renesas

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