RJH60T4DPQ-A0 Description
Preliminary Datasheet RJH60T4DPQ-A0 Silicon N Channel IGBT High Speed Power Switching.
RJH60T4DPQ-A0 Key Features
- Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25°C)
- Built in fast recovery diode in one package
- Trench gate and thin wafer technology
- High speed switching R07DS0460EJ0100 Rev.1.00 Jun 15, 2011