RJH60V1BDPP-M0 Description
Preliminary Datasheet RJH60V1BDPP-M0 600V - 8A - IGBT Application:.
RJH60V1BDPP-M0 Key Features
- Short circuit withstand time (6 s typ.)
- Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 8 A, VGE = 15 V, Ta = 25°C)
- Built in fast recovery diode (25 ns typ.) in one package
- Trench gate and thin wafer technology