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RJK03C1DPB Datasheet Silicon N Channel Power MOS FET

Manufacturer: Renesas

Overview: Preliminary RJK03C1DPB Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1830-0310 Power Switching Rev.3.

Key Features

  • High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.7 mΩ typ. (at VGS = 10 V).
  • Pb-free.
  • Halogen-free.
  • Outline.