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RJK03C2DPB - Silicon N-Channel MOSFET

Key Features

  • High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.9 mΩ typ. (at VGS = 10 V).
  • Pb-free.
  • Halogen-free.
  • Outline.

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Datasheet Details

Part number RJK03C2DPB
Manufacturer Renesas
File Size 284.32 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet RJK03C2DPB Datasheet

Full PDF Text Transcription for RJK03C2DPB (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for RJK03C2DPB. For precise diagrams, and layout, please refer to the original PDF.

Preliminary RJK03C2DPB Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1831-0200 Power Switching Rev.2.00 Sep 29, 2009 Features High speed switching Cap...

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ower Switching Rev.2.00 Sep 29, 2009 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.9 mΩ typ. (at VGS = 10 V) • Pb-free • Halogen-free • • • • • Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 6 7 8 D D D D 5 4 4 G 3 12 1, 2, 3 4 5 Source Gate Drain S S S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to Case Thermal Resistance Channel temperatu

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