RJK03C2DPB Datasheet | Renesas

Preliminary Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1831-0200 Power Switching Rev.2.00 Sep 29, 2009 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.9 mΩ typ. (at VGS = 10 V) - Pb-free - Halogen-free - - - - - Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 6 7 8 D D D D 5 4 4 G 3 12 1, 2, 3 4 5 Source Gate Drain S S S 1 2...